silicon planar epitaxial pnp transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3508 issue 4 page 1 of 3 2n2907acsm ? low power, high speed saturated switching ? hermetic surface mounted package. ? ideally suited for high speed switching and general purpose applications ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage -60v v ceo collector ? emitter voltage -60v v ebo emitter ? base voltage -5v i c continuous collector current -600ma p d total power dissipation at t a = 25c 500mw derate above 37.5c 3.08mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties (each device) symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 325 c/w
silicon planar epitaxial pnp transistor 2n2907acsm semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3508 issue 4 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = -10ma i b = 0 -60 v v cb = -60v i e = 0 -10 a v cb = -50v i e = 0 -10 na i cbo collector cut-off current t a = 150c -10 a v eb = -5v i c = 0 -10 a i ebo emitter cut-off current v eb = -4v i c = 0 -50 na i ces collector cut-off current v ce = -50v -50 na i c = -150ma i b = -15ma -0.4 v ce(sat) (1) collector-emitter saturation voltage i c = -500ma i b = -50ma -1.6 i c = -150ma i b = -15ma -0.6 -1.3 v be(sat) (1) base-emitter saturation voltage i c = -500ma i b = -50ma -2.6 v i c = -0.1ma v ce = -10v 75 i c = -1.0ma v ce = -10v 100 450 i c = -10ma v ce = -10v 100 t a = -55c 50 i c = -150ma v ce = -10v 100 300 h fe (1) forward-current transfer ratio i c = -500ma v ce = -10v 50 dynamic characteristics i c = -20ma v ce = -20v | h fe | small signal forward-current transfer ratio f = 100mhz 2 i c = -1.0ma v ce = -10v h fe small signal current gain f = 1.0khz 100 v cb = -10v i e = 0 c obo output capacitance f = 1.0mhz 8 v eb = -2v i c = 0 c ibo input capacitance f = 1.0mhz 30 pf i c = -150ma v cc = -30v t on turn-on time i b1 = -15ma 45 i c = -150ma v cc = -30v t off turn-off time i b1 = - i b2 = -15ma 300 ns notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial pnp transistor 2n2907acsm semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3508 issue 4 page 3 of 3 mechanical data dimensions in mm (inches) lcc1 underside view pad 1 - base pad 2 - emitter pad 3 - collector 2 1 0.51 0.10 (0.02 0.004) 0.31 (0.012) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 2 . 54 0 . 13 ( 0 . 10 0 . 005 ) 0 . 76 0 . 15 ( 0 . 03 0 . 006 ) 1.02 0.10 (0.04 0.004) 1.40 (0.055) max. a 0.31 (0.012) rad. rad. a = 3
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